The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Aug. 26, 2005
Jun Tanaka, Kawasaki, JP;
Miharu Otani, Yokohama, JP;
Kiyoshi Ogata, Tokyo, JP;
Yasumichi Suzuki, Yokohama, JP;
Katsuhiko Hotta, Hachioji, JP;
Jun Tanaka, Kawasaki, JP;
Miharu Otani, Yokohama, JP;
Kiyoshi Ogata, Tokyo, JP;
Yasumichi Suzuki, Yokohama, JP;
Katsuhiko Hotta, Hachioji, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductore layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.