Fremont, CA, United States of America

Xin Sun

USPTO Granted Patents = 5 

Average Co-Inventor Count = 7.1

ph-index = 1


Company Filing History:


Years Active: 2019-2025

Loading Chart...
5 patents (USPTO):Explore Patents

Title: Innovations by Inventor Xin Sun

Introduction

Xin Sun is a notable inventor based in Fremont, California, who has made significant contributions to the field of memory devices. With a total of five patents to his name, he has developed innovative solutions that enhance the performance and reliability of memory technology.

Latest Patents

One of Xin Sun's latest patents is titled "Method and apparatus for improving write uniformity in a memory device." This invention involves an apparatus that includes a memory comprising a group of memory cells coupled to a wordline. The controller in this apparatus is designed to skip programming of certain pages of the memory cells during a sequential write operation, while still allowing programming in response to random write commands. Another significant patent is the "Weak erase pulse," which describes systems and methods that bias a word line of a block in NAND memory to a specific voltage level. This technology allows for the issuance of a discharge erase pulse that injects holes into pillars of the block, effectively bypassing the erase of cells in those pillars.

Career Highlights

Throughout his career, Xin Sun has worked with prominent companies in the technology sector, including Intel Corporation and Intel NDTM US LLC. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Xin Sun has collaborated with various professionals in his field, including Richard M. Fastow and Krishna Kumar Parat. These collaborations have likely enriched his work and led to further advancements in memory device technology.

Conclusion

Xin Sun's contributions to memory technology through his patents and career experiences highlight his role as an influential inventor in the industry. His innovative approaches continue to shape the future of memory devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…