Hefei, China

Xiaoyu Yang


Average Co-Inventor Count = 2.4

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Innovations of Xiaoyu Yang in Memory Technology

Introduction

Xiaoyu Yang is a prominent inventor based in Hefei, China. He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approaches. His work focuses on methods for forming memory structures that enhance performance and reliability.

Latest Patents

Yang's latest patents include a method for forming a memory that involves creating a bit line structure and a capacitor contact layer. This method reduces the probability of short circuits between the capacitor landing layer and the bit line. Another notable patent is related to the manufacturing of a capacitor array, which outlines a detailed process for forming a laminated structure and etching techniques that improve the efficiency of memory devices.

Career Highlights

Xiaoyu Yang is currently employed at Changxin Memory Technologies, Inc., where he continues to develop cutting-edge memory solutions. His expertise in memory technology has positioned him as a key player in the industry, contributing to advancements that benefit various applications.

Collaborations

Yang collaborates with talented individuals in his field, including Liang Zhao and Gongyi Wu. These partnerships enhance the innovative capacity of their projects and contribute to the overall success of their endeavors.

Conclusion

Xiaoyu Yang's contributions to memory technology through his patents and work at Changxin Memory Technologies, Inc. highlight his role as an influential inventor in the industry. His innovative methods and collaborative efforts continue to drive advancements in memory solutions.

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