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For the Inventor, By the Inventor

Shenzhen, China

Xiaowu Cai

This inventor holds 7 USPTO granted patents. Top assignee: Hong Kong Applied Science and Technology Research Institute. Active years: 2013-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiaowu Cai. Retrieved from https://idiyas.com/inventor/xiaowu-cai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 85.7

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 24(Granted Patents)


Company Filing History:

goldMedal7 out of 611 
 
Hong Kong Applied Science and Technology Research Institute
 patents

Years Active: 2013-2017

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7 patents (USPTO):Explore Patents
1. 9640523 - Lateral-diode, vertical-SCR hybrid structure for high-level ESD protection (2017-05-02),
2. 9356442 - Area-efficient clamp for power ring ESD protection using a transmission gate (2016-05-31),
3. 9305916 - ESD power clamp for silicon-on-insulator (SOI) and FinFET processes lacking parasitic ESD diode (2016-04-05),
4. 9054521 - Electro-static-discharge (ESD) protection structure with stacked implant junction transistor and parallel resistor and diode paths to lower trigger voltage and raise holding volatge (2015-06-09),
5. 9021002 - Phase-to-amplitude converter for direct digital synthesizer (DDS) with reduced AND and reconstructed ADD logic arrays (2015-04-28),
6. 8643520 - Digital-to-analog converter (DAC) current cell with shadow differential transistors for output impedance compensation (2014-02-04),
7. 8369054 - NMOS-based feedback power-clamp for on-chip ESD protection (2013-02-05),

Title: Innovations of Xiaowu Cai in ESD Protection Technologies

Introduction

Xiaowu Cai is a prominent inventor based in Shenzhen, China, known for his significant contributions to electrostatic discharge (ESD) protection technologies. With a total of 7 patents to his name, Cai has developed innovative solutions that enhance the reliability and performance of electronic devices.

Latest Patents

Cai's latest patents include a "Lateral-diode, vertical-SCR hybrid structure for high-level ESD protection." This invention features a lateral p-n diode surrounded by a vertical Silicon-Controlled Rectifier (SCR), forming an effective ESD protection structure. The design incorporates a cross-shaped P+ diode tap with N+ diode regions, enhancing the device's performance. Another notable patent is the "Area-efficient clamp for power ring ESD protection using a transmission gate." This invention utilizes a charge-latching power-to-ground clamp circuit, which efficiently manages ESD protection through a combination of filter capacitors and a BigFET.

Career Highlights

Cai is currently employed at the Hong Kong Applied Science and Technology Research Institute Company, Limited, where he continues to push the boundaries of ESD protection technologies. His work has been instrumental in developing solutions that are both effective and efficient, addressing the growing need for reliable electronic components.

Collaborations

Cai collaborates with talented individuals such as Beiping Yan and Xiao Huo, contributing to a dynamic research environment that fosters innovation and creativity.

Conclusion

Xiaowu Cai's contributions to ESD protection technologies demonstrate his expertise and commitment to advancing the field. His innovative patents reflect a deep understanding of electronic design and a dedication to improving device reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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