Introduction: Xiaoqiang Jiang is a prominent inventor based in Phoenix, AZ (US). He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His innovative work focuses on methods that enhance the performance and reliability of semiconductor devices.

Latest Patents: Jiang's latest patents include a method of forming a germanium oxynitride film, which is crucial for creating layers suitable for a V-NAND stack. This method involves multiple cycles for forming an oxide and a nitride to create an oxynitride layer. Another notable patent is related to methods for semiconductor passivation by nitridation after oxide removal. This technique effectively passivates a semiconductor surface, particularly in the transistor channel region, by using hydrazine or its derivatives.

Career Highlights: Xiaoqiang Jiang is currently employed at ASML Holding B.V., where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise in forming oxynitride layers and passivation methods has positioned him as a key player in advancing semiconductor manufacturing processes.

Collaborations: Throughout his career, Jiang has collaborated with notable colleagues, including Fu Tang and Michael Eugene Givens. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion: Xiaoqiang Jiang's contributions to semiconductor technology through

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