The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
May. 31, 2016
Asm Ip Holding B.v., Almere, NL;
Qi Xie, Leuven, BE;
Fu Tang, Gilbert, AZ (US);
Michael Givens, Scottsdale, AZ (US);
Petri Raisanen, Gilbert, AZ (US);
Jan Willem Maes, Wilrijk, BE;
Xiaoqiang Jiang, Chandler, AZ (US);
ASM IP Holding B.V., Almere, NL;
Abstract
In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.