The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Jan. 03, 2017
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Fu Tang, Gilbert, AZ (US);
Michael E. Givens, Scottsdale, AZ (US);
Qi Xie, Lueven, BE;
Xiaoqiang Jiang, Tempe, AZ (US);
Petri Raisanen, Gilbert, AZ (US);
Pauline Calka, Leuven, BE;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); C23C 16/40 (2013.01); C23C 16/45544 (2013.01); H01L 21/0228 (2013.01); H01L 21/02178 (2013.01); H01L 21/02205 (2013.01); H01L 21/02274 (2013.01); H01L 21/02301 (2013.01); H01L 23/291 (2013.01);
Abstract
Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.
Published as: