Xiaoping Wang

Title: Innovations of Xiaoping Wang in Semiconductor Technology

Introduction

Xiaoping Wang is a notable inventor based in Singapore, recognized for her contributions to semiconductor technology. With a focus on enhancing transistor design, she has made significant strides in the field.

Latest Patents

Xiaoping Wang holds 1 patent for her invention titled "Extended drain metal-oxide-semiconductor transistor." This patent discloses devices and methods for forming a device that includes a transistor on a substrate. The transistor features a gate, a source, and a drain, with an insulation layer partially disposed on the gate and a sidewall of the gate. The drain is strategically offset from the gate by the insulation layer, and an overlayer is formed on the substrate covering both the transistor and insulation layer. Additionally, a field plate contact is formed in the overlayer, which is coupled to the insulation layer to mitigate the formation of electric fields adjacent to the drain side of the gate.

Career Highlights

Xiaoping Wang is currently employed at Globalfoundries Singapore Pte. Ltd., where she continues to innovate in the semiconductor industry. Her work has been instrumental in advancing the performance and efficiency of transistors, which are critical components in modern electronic devices.

Collaborations

Xiaoping has collaborated with notable colleagues, including Kun Liu and Francis Lionel Benistant, contributing to a dynamic and innovative work environment.

Conclusion

Xiaoping Wang's contributions to semiconductor technology, particularly through her patented innovations, highlight her role as a leading inventor in the field. Her work continues to influence the development of advanced electronic devices.