The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Dec. 22, 2022
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Khee Yong Lim, Singapore, SG;

Kiok Boone Elgin Quek, Singapore, SG;

Kian Ming Tan, Singapore, SG;

Wei Sin Phang, Singapore, SG;

Xiaoping Wang, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/225 (2025.01); H10F 77/00 (2025.01); H10F 71/00 (2025.01);
U.S. Cl.
CPC ...
H10F 30/2255 (2025.01); H10F 77/959 (2025.01); H10F 71/1221 (2025.01);
Abstract

A photodiode device may include a semiconductor substrate, a multiplication layer disposed in the semiconductor substrate and having a first width, a dielectric layer disposed over the multiplication layer, a charge layer coupled to the multiplication layer and having a second width, and an absorption layer disposed over the charge layer and having a third width. The second width of the charge layer may be smaller than the first width of the multiplication layer, and the third width of the absorption layer may be greater than the second width of the charge layer.


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