Xiaojuan Gao

Title: Innovations of Inventor Xiaojuan Gao

Introduction

Xiaojuan Gao is a prominent inventor based in Singapore, known for her contributions to semiconductor memory technology. With a total of 5 patents to her name, she has made significant strides in the field of electronics and memory devices.

Latest Patents

Among her latest innovations is a patent titled "Method for forming semiconductor memory device having a t-shaped erase gate." This invention discloses a method for creating a semiconductor memory device that includes a substrate, a source diffusion region, and two floating gates positioned on either side of the source diffusion region. The design features a first dielectric cap layer on each floating gate and an erase gate that partially overlaps the upper inner corners of the floating gates. Additionally, a second dielectric cap layer is formed on the erase gate and the first dielectric cap layer, culminating in a select gate that is self-aligned with the first dielectric cap layer.

Another notable patent is for a "Split gate memory with control gate having nonplanar top surface." This semiconductor memory device comprises a semiconductor substrate, a select gate, and a control gate that is adjacent to the select gate. The control gate features a non-planar top surface that enhances the device's functionality. The charge storage layer is strategically placed between the control gate and the semiconductor substrate, ensuring optimal performance.

Career Highlights

Xiaojuan Gao is currently employed at United Microelectronics Corporation, where she continues to innovate and develop advanced semiconductor technologies. Her work has been instrumental in pushing the boundaries of memory device capabilities.

Collaborations

Throughout her career, Xiaojuan has collaborated with notable colleagues, including Chi Ren and Liang Yi. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Xiaojuan Gao's contributions to the field of semiconductor memory devices exemplify her innovative spirit and dedication to advancing technology. Her patents reflect a deep understanding of complex electronic systems and a commitment to enhancing memory device performance.