Location History:
- Saratoga, CA (US) (1990 - 2006)
- Saratogo, CA (US) (2003 - 2006)
Company Filing History:
23 out of 54,814 
1 out of 832,880 Years Active: 1990-2006
Title: Innovations by Xiao-Chun Mu: Pioneering Polymer Memory Devices
Introduction
Xiao-Chun Mu, located in Saratoga, California, is a distinguished inventor renowned for his significant contributions to the field of polymer memory devices. Holding an impressive portfolio of 24 patents, Mu has established himself as a key innovator in memory technology, particularly in the development of ferroelectric polymer storage solutions.
Latest Patents
Among Mu's latest patents are notable advancements aimed at enhancing the efficiency and reliability of polymer memory devices. One of his key inventions is titled "Reliable adhesion layer interface structure for polymer memory electrode and method of making same". This patent details a novel polymer memory device comprising two organic adhesion layers that improve the integration of lower and upper electrodes alongside the ferroelectric polymer memory structure. Noteworthy features of this invention include the use of crystalline ferroelectric polymer layers in various compositions and the application of spin-on and Langmuir-Blodgett deposited compositions, enabling compatibility with existing memory systems.
Another significant innovation is titled "Stepped structure for a multi-rank, stacked polymer memory device and method of making same". This invention focuses on a ferroelectric polymer storage device with multiple stacked ferroelectric polymer memory structures, complemented by a pre-fabricated silicon substrate cavity that incorporates interlayer dielectric layers and via structures. This design enhances the data storage capabilities of polymer memory technology, making it suitable for advanced applications.
Career Highlights
Xiao-Chun Mu has had an illustrious career, with a notable stint at Intel Corporation, where he contributed to breakthrough technologies in memory devices. His extensive experience in the sector has enabled him to push the boundaries of polymer memory technology, resulting in numerous patents that are transforming the landscape of data storage solutions.
Collaborations
Throughout his career, Mu has collaborated with several talented individuals, including his colleagues Jian Li and Qing Ma. These collaborations have fostered innovation and have led to the successful development of pioneering memory technologies that hold promise for the future of data storage.
Conclusion
In summary, Xiao-Chun Mu's contributions to polymer memory technology mark him as a significant figure in the field of inventions and innovative solutions. His ongoing dedication to research and development continues to pave the way for advanced memory systems, solidifying his legacy as an impactful inventor in the technology sector.