The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2002
Filed:
Aug. 14, 2001
Applicant:
Inventors:
Jian Li, Sunnyvale, CA (US);
Xiao-Chun Mu, Saratoga, CA (US);
Sridhar Balakrishnan, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/130 ;
U.S. Cl.
CPC ...
H01L 2/130 ;
Abstract
Methods and apparatuses are disclosed in which a refractory layer is formed during rapid thermal processing wherein ambient hydrogen is used in the thermal processing chamber. Rapid thermal processing may occur at a temperature approximately in the range of 350° C. to approximately 550° C.
Li, Jian. (2002). Method and an apparatus for forming an under bump metallization structure (U.S. Patent No. 6461954). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6461954
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile