The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2005

Filed:

Jan. 21, 2004
Applicants:

Jian LI, Sunnyvale, CA (US);

Xiao-chun Mu, Saratoga, CA (US);

Mark Isenberger, Corrales, NM (US);

Inventors:

Jian Li, Sunnyvale, CA (US);

Xiao-Chun Mu, Saratoga, CA (US);

Mark Isenberger, Corrales, NM (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/06 ;
U.S. Cl.
CPC ...
Abstract

One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure may include spin-on and/or Langmuir-Blodgett deposited compositions. One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.


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