Jiangsu, China

Xiangqian Xiu

USPTO Granted Patents = 3 

Average Co-Inventor Count = 10.6

ph-index = 1


Location History:

  • Jiangshu, CN (2013)
  • Jiangsu, CN (2016)
  • Nanjing, CN (2021)

Company Filing History:


Years Active: 2013-2021

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3 patents (USPTO):Explore Patents

Title: Innovations of Xiangqian Xiu

Introduction

Xiangqian Xiu is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of technology, particularly in the development of advanced devices and methods. With a total of 3 patents to his name, his work reflects a commitment to innovation and excellence.

Latest Patents

Xiu's latest patents include a micro panchromatic QLED array device based on a quantum dot transfer process of deep silicon etching templates. This device features array-type square table structures that pass through a p-type GaN layer and a quantum well active layer, extending to an n-type GaN layer on a blue LED epitaxial wafer. The micro holes formed through etching in these structures are integral to the RGB pixel unit configuration. Additionally, he has developed a method for removing burrs of battery electrode plates using inductively coupled plasma dry etching. This method effectively prevents short circuits in batteries by removing burrs that can penetrate the membrane separator.

Career Highlights

Xiangqian Xiu is affiliated with Nanjing University, where he continues to engage in research and development. His work has garnered attention for its practical applications in the technology sector.

Collaborations

Xiu collaborates with notable colleagues, including Rong Zhang and Bin Liu, who contribute to his research endeavors.

Conclusion

Xiangqian Xiu's innovative work in the field of technology showcases his expertise and dedication to advancing modern solutions. His patents reflect a deep understanding of complex processes and a commitment to improving existing technologies.

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