The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
May. 03, 2010
Rong Zhang, Jiangsu, CN;
Zili Xie, Jiangshu, CN;
Bin Liu, Jiangshu, CN;
Xiangqian Xiu, Jiangshu, CN;
Henan Fang, Jiangshu, CN;
Hong Zhao, Jiangshu, CN;
Xuemei Hua, Jiangshu, CN;
Ping Han, Jiangshu, CN;
Peng Chen, Jiangshu, CN;
Youdou Zheng, Jiangshu, CN;
Rong Zhang, Jiangsu, CN;
Zili Xie, Jiangshu, CN;
Bin Liu, Jiangshu, CN;
Xiangqian Xiu, Jiangshu, CN;
Henan Fang, Jiangshu, CN;
Hong Zhao, Jiangshu, CN;
Xuemei Hua, Jiangshu, CN;
Ping Han, Jiangshu, CN;
Peng Chen, Jiangshu, CN;
Youdou Zheng, Jiangshu, CN;
Nanjing University, Nanjing, Jiangsu Province, CN;
Abstract
A kind of growth method of FeNin the MOCVD system, comprising following process: 1) make the surface nitridation of sapphire substrate; 2) pump in carrier gas N, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3) raise temperature and grow the GaN supporting layer; 4) pump in FeCpas Fe sources, then grow FeN on the GaN supporting layer; the FeN granular films and the FeN single crystal films are obtained.