Company Filing History:
Years Active: 2013
Title: Innovations of Henan Fang in Gallium Nitride Growth Methods
Introduction: Henan Fang is an accomplished inventor based in Jiangsu, China, known for his significant contributions to the field of materials science. With a focus on the growth methods of iron nitride (FeN) in metal-organic chemical vapor deposition (MOCVD) systems, his innovative approach has led to advancements in semiconductor materials.
Latest Patents: Henan Fang holds one notable patent titled "A kind of growth method of FeN in the MOCVD system." The patent outlines a comprehensive process that includes several crucial steps. First, it involves the surface nitridation of a sapphire substrate. Next, the carrier gas nitrogen, ammonia, and organic gallium sources are introduced to grow a low-temperature GaN buffer on the substrate. The temperature is then increased to facilitate the growth of the GaN supporting layer. Finally, iron (Fe) sources in the form of FeC are pumped in to grow FeN on the GaN supporting layer, resulting in the production of both FeN granular films and FeN single crystal films.
Career Highlights: Henan Fang's career is anchored at Nanjing University, where he is engaged in innovative research that blends theoretical and practical aspects of semiconductor fabrication. His work is pivotal for enhancing the performance of electronic devices that rely on GaN and FeN materials.
Collaborations: Collaborating closely with coworkers Rong Zhang and Zili Xie, Fang is part of a team that fosters innovation in the field. Their combined expertise contributes significantly to the advancement of semiconductor technology and the development of state-of-the-art research projects.
Conclusion: Henan Fang's contributions to the field of semiconductor material growth exemplify the essence of innovation. His patent on a growth method for FeN within MOCVD systems showcases his dedication to advancing material science, offering valuable insights for future technological developments. Through his work at Nanjing University and collaborations with fellow researchers, Fang continues to make impactful strides in the world of inventions and patents.