Company Filing History:
Years Active: 2013
Title: The Innovative Contributions of Hong Zhao
Introduction
Hong Zhao is a prominent inventor based in Jiangsu, China. He has made significant contributions to the field of materials science, particularly in the development of growth methods for FeN in MOCVD systems. His innovative approach has led to advancements in the production of high-quality materials.
Latest Patents
Hong Zhao holds a patent for a unique growth method of FeN in the MOCVD system. This method involves several key processes: first, the surface nitridation of a sapphire substrate is performed. Next, carrier gas N, ammonia, and organic gallium sources are pumped in to grow a low-temperature GaN buffer on the substrate. The temperature is then raised to grow the GaN supporting layer. Finally, FeCpas Fe sources are introduced to grow FeN on the GaN supporting layer, resulting in the production of FeN granular films and FeN single crystal films. This patent showcases his expertise and innovative thinking in material growth techniques.
Career Highlights
Hong Zhao is affiliated with Nanjing University, where he continues to conduct research and develop new technologies. His work has garnered attention in the academic community, and he is recognized for his contributions to the field of semiconductor materials.
Collaborations
Hong Zhao has collaborated with notable colleagues, including Rong Zhang and Zili Xie. These partnerships have further enhanced his research and innovation efforts.
Conclusion
In summary, Hong Zhao is an influential inventor whose work in the growth methods of FeN has made a significant impact in materials science. His contributions continue to inspire advancements in the field.