Nanjing University

Xiangqian Xiu

Rong Zhang

Bin Liu

Peng Chen

Zili Xie

Ping Han

Youdou Zheng

Yi Shi

Tao Tao

Xuan Wang

Bing Liu

Yi Li

Ting Zhi

Zhiguo Yu

Yugang Zhou

Henan Fang

Di Jiang

Hong Zhao

Junchi Yu

Dunjun Chen

Xuemei Hua

Danfeng Pan

Zhili Xie

A micro panchromatic QLED array device based on a quantum dot transfer process of deep silicon etching templates. Array-type square table structures pass through a p-type GaN layer and a quantum well active layer and are deep to an n-type GaN layer are disposed on a blue LED epitaxial wafer, wherein micro holes are formed through etching in the structures. Every 2*2 table structures constitute an RGB pixel unit. Among the four micro holes, three of the holes are filled with red light, green light and yellow light quantum dots respectively, and one of the holes emits blue light/is filled with a blue light quantum dot. Micro holes in a silicon wafer are formed through etching with a deep silicon etching technology; the micro holes in the silicon wafer are aligned with quantum dot filling areas on a micro-LED.

Micro panchromatic QLED array device based on quantum dot transfer process of deep silicon etching templates, and preparation method therefor

The present invention provides a method for removing burrs of battery electrode plates using inductively coupled plasma (ICP) dry etching, in which an induction coil is used for ionizing reaction gas. A DC bias is applied to accelerate the ionized reaction gas to bombard the burrs of electrode plate, removing burrs that formed in machining processes using physical bombardment. The equipment used in the present invention is an ICP etch system. The method according to the present invention can completely remove the burrs of electrode plate, thereby effectively preventing short circuits caused by burrs penetrating the membrane separator in the battery.

Method for removing burrs of battery electrode plates by inductively coupled plasma dry etching

A kind of growth method of FeNin the MOCVD system, comprising following process: 1) make the surface nitridation of sapphire substrate; 2) pump in carrier gas N, ammonia and organic gallium sources, and grow low temperature GaN buffer on substrate; 3) raise temperature and grow the GaN supporting layer; 4) pump in FeCpas Fe sources, then grow FeN on the GaN supporting layer; the FeN granular films and the FeN single crystal films are obtained.

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Jiangsu, China

Xiangqian Xiu