The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Nov. 11, 2019
Nanjing University, Nanjing, CN;
Bin Liu, Nanjing, CN;
Di Jiang, Nanjing, CN;
Junchi Yu, Nanjing, CN;
Xuan Wang, Nanjing, CN;
Danfeng Pan, Nanjing, CN;
Zili Xie, Nanjing, CN;
Yugang Zhou, Nanjing, CN;
Dunjun Chen, Nanjing, CN;
Xiangqian Xiu, Nanjing, CN;
Rong Zhang, Nanjing, CN;
NANJING UNIVERSITY, Nanjing, CN;
Abstract
A micro panchromatic QLED array device based on a quantum dot transfer process of deep silicon etching templates. Array-type square table structures pass through a p-type GaN layer and a quantum well active layer and are deep to an n-type GaN layer are disposed on a blue LED epitaxial wafer, wherein micro holes are formed through etching in the structures. Every 2*2 table structures constitute an RGB pixel unit. Among the four micro holes, three of the holes are filled with red light, green light and yellow light quantum dots respectively, and one of the holes emits blue light/is filled with a blue light quantum dot. Micro holes in a silicon wafer are formed through etching with a deep silicon etching technology; the micro holes in the silicon wafer are aligned with quantum dot filling areas on a micro-LED.