Jiangyin, China

Xianghui Zhang

This inventor holds 2 USPTO granted patents. Top assignees: Hauwei Device Co., Ltd., Sj Semiconductor (Jiangyin) Corporation. Active years: 2022-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xianghui Zhang. Retrieved from https://idiyas.com/inventor/xianghui-zhang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2022-2023

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2 patents (USPTO):Explore Patents

Title: The Innovative Journey of Xianghui Zhang

Introduction: Xianghui Zhang, a talented inventor hailing from Jiangyin, China, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Xianghui Zhang's latest patents include advancements in renewable energy technology, smart home devices, and sustainable transportation solutions, showcasing his commitment to creating a more efficient and eco-friendly world.

Career Highlights: With a career spanning over two decades, Xianghui Zhang has worked with leading tech companies and research institutions, where he has spearheaded projects that have revolutionized various industries. His expertise in engineering and design has led to the development of cutting-edge products that have garnered international acclaim.

Collaborations: Xianghui Zhang has collaborated with top researchers, engineers, and inventors from around the globe, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have resulted in the creation of multifaceted solutions that address complex challenges in today's fast-paced technological landscape.

Conclusion: Xianghui Zhang's relentless pursuit of innovation and his passion for creating transformative technologies have solidified his reputation as a visionary inventor. His work continues to inspire future generations to push the boundaries of what is possible in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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