Average Co-Inventor Count = 1.4

ph-index = 14

Forward Citations = 516(Granted Patents)

Location History:

Mohegan Lake, NY (US) (2002 - 2005)
Shanghai, CN (2004 - 2013)

Company Filing History:

14 out of 1,723

Semiconductor Manufacturing International (shanghai) Corporation

patents

13 out of 14,705

Infineon Technologies Ag

patents

2 out of 164,108

International Business Machines Corporation

patents

4. 1 out of 244

Infineon Technologies North America Corp.

patents

5. 1 out of 934

Semiconductor Manufacturing International (beijing) Corporation

patents

6. 4 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 2002-2013

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34 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8395240 - Bond pad for low K dielectric materials and method for manufacture for semiconductor devices (2013-03-12),

2. 8392863 - Method for circuit layout and rapid thermal annealing method for semiconductor apparatus (2013-03-05),

3. 8158520 - Method of forming a via structure dual damascene structure for the manufacture of semiconductor integrated circuit devices (2012-04-17),

4. 8106423 - Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors (2012-01-31),

5. 8049308 - Bond pad for low K dielectric materials and method for manufacture for semiconductor devices (2011-11-01),

6. 7820500 - Single mask scheme method and structure for integrating PMOS and NMOS transistors using strained silicon (2010-10-26),

7. 7709336 - Metal hard mask method and structure for strained silicon MOS transistors (2010-05-04),

8. 7663159 - Seal ring corner design (2010-02-16),

9. 7605470 - Dummy patterns and method of manufacture for mechanical strength of low K dielectric materials in copper interconnect structures for semiconductor devices (2009-10-20),

10. 7591659 - Method and structure for second spacer formation for strained silicon MOS transistors (2009-09-22),

11. 7547595 - Integration scheme method and structure for transistors using strained silicon (2009-06-16),

12. 7479699 - Seal ring structures with unlanded via stacks (2009-01-20),

13. 7425488 - Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors (2008-09-16),

14. 7335566 - Polysilicon gate doping method and structure for strained silicon MOS transistors (2008-02-26),

15. 7183130 - Magnetic random access memory and method of fabricating thereof (2007-02-27),

Title: Xian Jay Ning: Innovator in Semiconductor Technology

Introduction

Xian Jay Ning, a prominent inventor based in Shanghai, China, holds an impressive portfolio of 34 patents, showcasing his remarkable contributions to the field of semiconductor technology. His innovative approaches have led to developments that enhance device performance and manufacturing methodologies.

Latest Patents

Among Xian's latest patents are two significant inventions:

1. **Bond Pad for Low K Dielectric Materials and Method for Manufacture for Semiconductor Devices** - This patent details a method for manufacturing a semiconductor device with an improved contact structure. It includes the provision of a semiconductor substrate and the formulation of gate structures, interlayer dielectric layers, and copper interconnect layers. This innovative method also involves a bonding pad structure that optimizes the device's electric performance by strategically using a copper ring structure within the dielectric layer.

2. **Method for Circuit Layout and Rapid Thermal Annealing Method for Semiconductor Apparatus** - This patent introduces a design method for circuit layout that avoids the addition of dummy structures. It establishes relationships among electric parameters, annealing temperatures, and STI pattern densities, allowing for an improved design that enhances device performance without unnecessary complexity.

Career Highlights

Xian Jay Ning has built his career at notable companies within the semiconductor industry, including Semiconductor Manufacturing International Corporation and Infineon Technologies AG. His work at these institutions has not only contributed to his expertise but also to significant advancements in semiconductor device manufacturing and design.

Collaborations

Throughout his career, Xian has collaborated with esteemed colleagues, such as Joachim Nuetzel and John Chen. These collaborations have fostered a rich exchange of ideas and have likely played a role in the innovations and patents that Xian has developed.

Conclusion

Xian Jay Ning’s extensive patent portfolio and his collaborative efforts within leading semiconductor companies underscore his status as a key innovator in the industry. His advancements in semiconductor technologies continue to pave the way for future innovations, solidifying his contribution to the field.

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