Chungcheongbuk-do, South Korea

Wouns Yang


Average Co-Inventor Count = 2.4

ph-index = 3

Forward Citations = 31(Granted Patents)


Location History:

  • Cheongju-si, KR (1998)
  • Chungcheongbuk-do, KR (1999 - 2002)

Company Filing History:


Years Active: 1998-2002

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6 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Wouns Yang in Semiconductor Fabrication

Introduction

Wouns Yang, a prominent inventor hailing from Chungcheongbuk-do, KR, has significantly impacted semiconductor technology with his innovative solutions. Holding a total of six patents, Yang's work primarily focuses on methods of fabricating semiconductor devices and integrated circuits, showcasing his expertise in this critical field.

Latest Patents

Among Yang's notable contributions are two groundbreaking patents. The first, titled "Method of Fabricating a Semiconductor Device," outlines a novel approach to form plugs within semiconductor devices that connect upper and lower conductive layers. This method enhances the efficiency of semiconductor fabrication by eliminating the need for contact holes. Yang describes the process, which includes defining active areas, forming gate oxides, and creating impurity regions, culminating in the formation of plugs that contact these regions effectively.

The second patent, "Method for Fabricating Capacitor in DRAM Cell," presents a detailed procedure for constructing capacitors in dynamic random-access memory (DRAM) cells. This intricate process includes forming wordlines and source/drain impurity regions, alongside methods for creating plugs and bitlines that interact seamlessly within the semiconductor substrate. Yang's innovative approach includes the formation of capacitor storage electrodes through sputtering and anisotropic etching, showcasing his commitment to advancing semiconductor technology.

Career Highlights

Wouns Yang has lent his expertise to notable companies such as Hyundai Electronics Industries Co., Ltd. and LG Semicon Co., Ltd. During his tenure at these organizations, he has contributed to the development of cutting-edge semiconductor technologies, cementing his reputation as a leading inventor in the industry. His work has paved the way for advancements that resonate throughout the semiconductor sector.

Collaborations

Throughout his career, Yang has collaborated with esteemed colleagues including Kun Sik Park and Jeong-Soo Park. Together, they have fostered a collaborative environment that drives innovation, sharing knowledge and expertise that contribute to their collective success in the industry.

Conclusion

Wouns Yang's contributions to semiconductor technology through his patents and collaborative efforts illustrate his role as a significant innovator in the field. His latest patents not only enhance the fabrication processes for semiconductor devices and DRAM cells but also exemplify the ingenuity and expertise that define his career. Yang's work continues to inspire new advancements in the rapidly evolving world of electronics and semiconductor manufacturing.

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