Method of fabricating a semiconductor device

Abstract

A method of fabricating semiconductor device is provided that includes a method of forming plugs in a semiconductor device. The plugs or contacts can connect an upper conductive layer to a lower conductive layer. The plugs are preferably formed without providing contact holes. The method of fabricating a semiconductor device can include the steps of defining an active area of a device by forming a field insulating layer on a semiconductor substrate of a first conductivity type, forming a gate oxide on an exposed surface of the active layer and forming a plurality of gates and associated cap insulating layers along a first direction perpendicular to an active area. An impurity region of a second conductivity type is formed in the exposed active area of the semiconductor substrate and a plurality of sidewall spacers are formed at sides of the gates. An electrically-conductive layer is formed for contacting the impurity region between the gates on the semiconductor substrate. The method can further include forming a plurality of plugs by patterning the electrically-conductive layer so that the plugs contact the impurity region, and an insulating interlayer is then formed where the plugs are not formed between the gates.