Wolfgang Rösner

Title: Wolfgang Rösner: Innovator in Memory Technology

Introduction

Wolfgang Rösner is a prominent inventor based in Ottobrunn, Germany. He has made significant contributions to the field of memory technology, holding a total of 12 patents. His innovative work focuses on the development of advanced memory elements and semiconductor memory cells.

Latest Patents

Among his latest patents is a memory element and method for fabricating a memory element. This invention features a memory element composed of organic material, which includes two metallized layers arranged one on top of the other. The design incorporates first lines and second lines that intersect, forming channels filled with a material whose electrical conductivity can be altered by an applied voltage. Another notable patent is for a nonvolatile semiconductor memory cell, which includes a transistor component on a substrate and a storage node that determines the switching state of the transistor. This storage node is strategically placed near a control gate electrode and consists of vertically oriented column structures with semiconductor and insulating layer zones.

Career Highlights

Throughout his career, Wolfgang Rösner has worked with notable companies, including Infineon Technologies AG. His expertise in memory technology has positioned him as a key figure in the industry, contributing to advancements that enhance data storage capabilities.

Collaborations

Wolfgang has collaborated with esteemed colleagues such as Lothar Risch and Ties Ramcke. Their combined efforts have furthered the development of innovative memory solutions.

Conclusion

Wolfgang Rösner's contributions to memory technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in semiconductor memory systems.