The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Sep. 16, 1999
Applicant:
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
In order to produce a vertical MOS transistor with optimized gate overlap capacitances, a mesa structure is formed with an upper source/drain region, a channel region and a lower source/drain region. With the aid of chemical/mechanical polishing, an insulation structure is formed which essentially covers the side walls of the lower source/drain region. A gate dielectric and a gate electrode, whose height is essentially equal to the height of the channel region, are formed on the side walls of the channel region.