Company Filing History:
Years Active: 2011-2012
Title: William Wei-Yuan Tien: Innovator in Semiconductor Technology
Introduction
William Wei-Yuan Tien is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on improving the performance and efficiency of high voltage transistors.
Latest Patents
Among his latest patents is a high voltage transistor with improved driving current. This semiconductor device features an active region formed within a substrate, bounded by an isolation region. The design includes a first doped region within the active region and a gate electrode that overlies a portion of this region. Additionally, the patent describes the formation of dielectric layers and spacers, leading to a double diffused drain structure akin to an HVMOS transistor. Another notable patent is for a high voltage LDMOS transistor. This structure includes a gate electrode that extends over an upper boundary of an extension dielectric region, which separates the gate from the drain region. The innovative design aims to enhance the suppression of hot carrier effects in LDMOS transistors.
Career Highlights
William Wei-Yuan Tien is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative designs have contributed to the advancement of semiconductor technologies.
Collaborations
He has collaborated with notable colleagues, including Fu-Hsin Chen and Jui-Wen Lin, to further enhance the development of semiconductor devices.
Conclusion
William Wei-Yuan Tien's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to pave the way for advancements in high voltage transistors and LDMOS technology.