The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2012
Filed:
May. 02, 2008
William Wei-yuan Tien, Hsin-Chu, TW;
Chao-wei Tseng, Jhonghe, TW;
Fu-hsin Chen, Jhudong Township, TW;
William Wei-Yuan Tien, Hsin-Chu, TW;
Chao-Wei Tseng, Jhonghe, TW;
Fu-Hsin Chen, Jhudong Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An LDMOS transistor structure and methods of making the same are provided. The structure includes a gate electrode extended on an upper boundary of an extension dielectric region that separates the gate electrode from the drain region of the LDMOS transistor. Moreover, at an area close to an edge of the extended gate electrode portion, the gate electrode further projects downwards into a convex-shaped recess or groove in the upper boundary of the extension dielectric region, forming a tongue. LDMOS transistors with this structure may provide improved suppression of hot carrier effects.