The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Oct. 19, 2005
William Wei-yuan Tien, Hsinchu, TW;
Fu-hsin Chen, Jhudong Township, TW;
Jui-wen Lin, Taichung, TW;
You-kuo Wu, Sijhih, TW;
William Wei-Yuan Tien, Hsinchu, TW;
Fu-Hsin Chen, Jhudong Township, TW;
Jui-Wen Lin, Taichung, TW;
You-Kuo Wu, Sijhih, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and its method of manufacture are provided. Embodiments include forming a first doped region and a second doped region. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor. A gate-side boundary of the first doped region underlies part of the gate electrode. The second doped region is formed within the first doped region adjacent the gate electrode. A gate-side boundary of the second doped region is separated from a closest edge of a gate electrode spacer by a first distance. An isolation region-side boundary of the second doped region is separated from a closest edge of a nearest isolation region by a second distance.