The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Jul. 11, 2011
William Wei-yuan Tien, Hsin-Chu, TW;
Fu-hsin Chen, Jhudong Township, TW;
Jui-wen Lin, Taichung, TW;
You-kuo Wu, Sijhih, TW;
William Wei-Yuan Tien, Hsin-Chu, TW;
Fu-Hsin Chen, Jhudong Township, TW;
Jui-Wen Lin, Taichung, TW;
You-Kuo Wu, Sijhih, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and its method of manufacture are provided. Embodiments forming an active region in a semiconductor substrate, wherein the active region is bounded by an isolation region; forming a first doped region within the active region; forming a gate electrode over the active region, wherein the gate electrode overlies a portion of the first doped region; forming at least one dielectric layer over sidewalls of the gate electrode; forming a pair of spacers on the dielectric layer; and forming a second doped region substantially within the portion of the first doped region adjacent the one of the spacers and spaced apart from the one of the spacers. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor.