Fountain Valley, CA, United States of America

William W Lee

This inventor holds 5 USPTO granted patents. Top assignee: Hughes Aircraft Company. Active years: 1984-1988.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William W Lee. Retrieved from https://idiyas.com/inventor/william-w-lee-4xmedb5b

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 5

Forward Citations = 49(Granted Patents)


Location History:

  • Fountain Valley, CA (US) (1984 - 1986)
  • Fullerton, CA (US) (1987)
  • Saratoga, CA (US) (1988)

Company Filing History:


Years Active: 1984-1988

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5 patents (USPTO):Explore Patents

Title: The Innovations of William W. Lee: A Pioneer in CMOS Technology

Introduction

William W. Lee, an accomplished inventor based in Fountain Valley, CA, has made significant contributions to the field of complementary metal-oxide-semiconductor (CMOS) technology. With a remarkable portfolio of five patents, his innovations have paved the way for advancements in integrated circuit designs. His latest patents exemplify his commitment to developing efficient and reliable semiconductor processes.

Latest Patents

One of William W. Lee's notable inventions is the **Double Layer Photoresist Process for Well Self-Align**. This technique is a breakthrough in obtaining a self-aligned twin-well structure in CMOS processes. By employing a double layer of two different photoresist materials, Lee's invention utilizes an overhang photoresist structure for effective p-well masking and ion implantation processes. The method leads to improved efficiency in creating semiconductor devices.

Another significant patent is the **Latch-Up Resistant CMOS Structure for VLSI Including Retrograded Wells**. This innovative design features a CMOS structure where the source and drain regions of individual transistor devices are strategically separated from the peak impurity concentrations of their respective N- and P-wells. Trenches between the transistor devices form highly doped field regions, enhancing the overall performance and reliability of the CMOS technology.

Career Highlights

William W. Lee has spent a notable part of his career at Hughes Aircraft Company, where he has been integral to advancing CMOS technologies. His work has contributed to the development of robust and efficient semiconductor devices, addressing challenges in the industry and enhancing the functionality of high-performance electronics.

Collaborations

Throughout his journey as an inventor, William W. Lee has collaborated with esteemed colleagues, including Kuang-Yeh Chang and Kuan Y. Liao. Their combined efforts in research and development have led to innovative solutions that have greatly impacted the semiconductor landscape.

Conclusion

William W. Lee's contributions to the field of CMOS technology through his patents reflect his dedication to innovation. His inventions not only enhance the performance of semiconductor devices but also pave the way for future developments in electronics. As an influential figure in this domain, Lee's work continues to inspire the next generation of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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