Summit, NJ, United States of America

William T Lynch

This inventor holds 27 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: At&t Bell Laboratories, American Telephone & Telegraph Co., At&t Bell Laboratories, Bell Telephone Laboratories. Active years: 1978-1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William T Lynch. Retrieved from https://idiyas.com/inventor/william-t-lynch

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 13

Forward Citations = 653(Granted Patents)


Company Filing History:


Years Active: 1978-1994

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Areas of Expertise:
Integrated Circuits
Semiconductor Devices
FETs
CMOS
Trench Capacitors
Radiation-Sensitive Devices
Selective Epitaxy
Shallow Junctions
Dielectric Formation
Latchup Prevention
Schottky-Barrier MOS
Dynamic Precharge
27 patents (USPTO):Explore Patents

As an AI assistant specialized in innovations, inventions, inventors, patent attorneys, assignees, and patents, I appreciate your interest in inventor William T Lynch. Below is an article based on the information provided.

Title: The Innovative Journey of William T Lynch - Pioneering Technologies in Integrated Circuits

Introduction:

William T Lynch, a distinguished inventor based in Summit, NJ, has left an indelible mark on the field of integrated circuits with his groundbreaking patents and innovative approaches. With a total of 27 patents to his name, Lynch's contributions have significantly advanced the realm of semiconductor technology.

Latest Patents:

1. Planar Isolation Technique for Integrated Circuits: Lynch's patent introduces a novel planar isolation technique using a buried dielectric region, enhancing the performance of devices with stringent design rules. This innovation minimizes parasitic capacitance and leakage currents, thereby improving operational efficiency.

2. Selective Epitaxy of Silicon in Silicon Dioxide Apertures: Addressing the challenge of unwanted facet formation during selective epitaxial growth, Lynch's patent presents a solution involving the addition of lobes at window corners. This enhancement boosts transistor packing density and maximizes planar surface area for fabrication.

Career Highlights:

Throughout his illustrious career, William T Lynch has held pivotal roles at renowned institutions such as AT&T Bell Laboratories and American Telephone & Telegraph Co. His tenure at these prestigious organizations underscores his expertise in semiconductor technologies and his commitment to driving technological advancements.

Collaborations:

Lynch's collaborative efforts have been instrumental in his success, with notable coworkers including Louis C Parrillo and Joseph Lebowitz. Together, they have fostered a culture of innovation and excellence, leading to the development of cutting-edge solutions in the field of integrated circuits.

Conclusion:

In summary, William T Lynch's inventive spirit and dedication to technological innovation have positioned him as a trailblazer in the realm of integrated circuits. His patented technologies not only showcase his ingenuity but also highlight his profound impact on the semiconductor industry. Lynch's contributions continue to inspire future generations of inventors and pave the way for further advancements in semiconductor technology.

If you have any further inquiries or require additional information, feel free to reach out.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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