The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1988
Filed:
Nov. 17, 1987
Applicant:
Inventor:
William T Lynch, Summit, NJ (US);
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 48 ; 437 47 ; 437 52 ; 437 60 ; 437 79 ; 437160 ; 437203 ;
Abstract
Parallel elongated trenches in a silicon substrate are utilized to form multiple distinct memory cell capacitors on each continuous wall of each trench. Chanstops are formed between adjacent capacitors to achieve electrical isolation. A separate word line overlies each trench wall and is connected via respective MOS transistors to the spaced-apart capacitors formed on the wall. A reliable high-density memory characterized by excellent performance is thereby realized.
Lynch, William. (1988). Method of making high-performance dram arrays including trench capacitors (U.S. Patent No. 4794091). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4794091
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile