The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 1989
Filed:
Jun. 12, 1984
Applicant:
Inventors:
William T Lynch, Summit, NJ (US);
Frederick Vratny, Berkeley, NJ (US);
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437193 ; 437200 ; 437162 ; 437 41 ; 437984 ;
Abstract
A method of fabricating FETs to reduce parasitics. Contact is made to the source and drain regions through a polycrystalline silicon runner which is aligned with the edge of the gate electrode. This is accomplished by providing a multi-level electrode structure including a gate electrode and depositing the polycrystalline silicon layer over the device. The polycrystalline silicon is rendered selectively removable in the portion overlying the gate electrode. When this portion is removed, the remaining polycrystalline is aligned with the gate.