This inventor holds 6 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 1976-1982.
Location History:
- Hopewell Junction, NY (US) (1976 - 1977)
- Scotsdale, AZ (US) (1978 - 1982)
Company Filing History:
Years Active: 1976-1982
Title: William Stanford Johnson: Innovator in MOS Field Effect Transistors
Introduction
William Stanford Johnson is a notable inventor based in Hopewell Junction, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS field effect transistors. With a total of 6 patents to his name, Johnson's work has had a lasting impact on integrated circuit design.
Latest Patents
Among his latest patents, Johnson has developed a "Narrow channel length MOS field effect transistor with field protection." This invention describes a method for fabricating an N-channel silicon MOS field effect transistor on a P-type substrate. The structure retains the natural isolation between devices, allowing for a higher device density in integrated circuit structures compared to conventional double diffused MOS field effect transistor devices. The device is fabricated using ion implantation to create an N-type surface layer in the channel, followed by overcompensation to create a P-type region near the source. This innovative approach results in considerably less source to substrate capacitance than conventional devices, leading to improved circuit performance.
Another significant patent is the "Method for forming a narrow channel length MOS field effect transistor." This patent outlines a similar fabrication method for the N-channel silicon MOS field effect transistor on a P-type substrate, emphasizing the advantages of device density and performance.
Career Highlights
William Stanford Johnson is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work at IBM has positioned him as a key player in the advancement of integrated circuits.
Collaborations
Throughout his career, Johnson has collaborated with notable colleagues, including David DeWitt and Ronald W. Knepper. These collaborations have further enriched his contributions to the field.
Conclusion
William Stanford Johnson's innovative work in MOS field effect transistors has significantly advanced semiconductor technology. His patents reflect a deep understanding of device fabrication and performance enhancement, making him a prominent figure in the industry.