For the Inventor, By the Inventor

Enter inventor name

Hopewell Junction, NY, United States of America

William Stanford Johnson

USPTO Granted Patents = 6

Average Co-Inventor Count = 1.6

ph-index = 5

Forward Citations = 171(Granted Patents)

Location History:

Hopewell Junction, NY (US) (1976 - 1977)
Scotsdale, AZ (US) (1978 - 1982)

Company Filing History:

6 out of 164,197

International Business Machines Corporation

Years Active: 1976-1982

Loading Chart...

6 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 4350991 - Narrow channel length MOS field effect transistor with field protection (1982-09-21),

2. 4078947 - Method for forming a narrow channel length MOS field effect transistor (1978-03-14),

3. 4017888 - Non-volatile metal nitride oxide semiconductor device (1977-04-12),

4. 3983572 - Semiconductor devices (1976-09-28),

5. 3976511 - Method for fabricating integrated circuit structures with full (1976-08-24),

6. 3946419 - Field effect transistor structure for minimizing parasitic inversion and (1976-03-23),

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…