The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1976
Filed:
Oct. 18, 1974
William S Johnson, Hopewell Junction, NY (US);
International Business Machines, Armonk, NY (US);
Abstract
The invention is concerned with methods for producing improved semiconductor devices. The invention is advantageously employable in the fabrication of insulated-gate field-effect transistor devices. The problem of accurately aligning the gate electrode over the channel region, lying between the source region and the drain region of a field effect transistor, is particularly addressed and solved. Accurate and precise field protection of all areas of the field-effect transistor surrounding the channel, source and drain regions is simply and effectively accomplished. The proper alignment of the gate electrode is largely accomplished by utilizing essentially the same mask structure to define the gate, source and drain regions. The same mask structure is utilized to define the area that is field protected.