Austin, TX, United States of America

William J Taylor

This inventor holds 3 USPTO granted patents. Top assignees: Motorola Corporation, Freescale Semiconductor,inc.. Active years: 1997-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William J Taylor. Retrieved from https://idiyas.com/inventor/william-j-taylor-g4ho0x3j

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 66.7

Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 1997-2009

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3 patents (USPTO):Explore Patents

Title: Innovations of William J Taylor

Introduction

William J Taylor is a notable inventor based in Austin, TX (US). He has made significant contributions to the field of electronic devices, holding a total of 3 patents. His work focuses on advanced semiconductor technologies that enhance the performance and efficiency of electronic components.

Latest Patents

One of his latest patents is titled "Process for forming an electronic device including semiconductor layers having different stresses." This invention describes an electronic device that features an insulating layer positioned between a first semiconductor layer and a base layer. A second semiconductor layer, differing in composition and stress from the first, can overlie part of the first semiconductor layer. This design allows for the creation of electronic components with distinct active regions, utilizing various processes to form the device. Additionally, the patent discusses methods for altering the stress of semiconductor layers through annealing processes.

Another significant patent by Taylor is "Transistor with shaped gate electrode and method therefor." This invention presents a transistor structure that includes a retrograde gate structure, which is narrower at the end interfacing with the gate dielectric than at the opposite end. The gate structure is formed by depositing a layer of gate material with varying composition, resulting in different etch rate characteristics. This innovation enhances the manufacturing process of transistors, leading to improved performance.

Career Highlights

Throughout his career, William J Taylor has worked with prominent companies such as Motorola Corporation and Freescale Semiconductor, Inc. His experience in these organizations has contributed to his expertise in semiconductor technology and electronic device innovation.

Collaborations

Taylor has collaborated with notable individuals in the field, including Srikanth Balaji Samavedam and Nigel Graeme Cave. These collaborations have likely enriched his work and led to further advancements in his inventions.

Conclusion

William J Taylor's contributions to the field of electronics through his patents and collaborations highlight his innovative spirit and dedication to advancing technology. His work continues to influence the development of electronic devices, showcasing the importance of innovation in this rapidly evolving industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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