The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Mar. 13, 2006
Mariam G. Sadaka, Austin, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
William J. Taylor, Austin, TX (US);
Victor H. Vartanian, Austin, TX (US);
Mariam G. Sadaka, Austin, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
William J. Taylor, Austin, TX (US);
Victor H. Vartanian, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An electronic device can have an insulating layer lying between a first semiconductor layer and a base layer. A second semiconductor layer, having a different composition and stress as compared to the first semiconductor layer, can overlie at least a portion of the first semiconductor layer. In one embodiment, a first electronic component can include a first active region that includes a first portion of the first and the second semiconductor layers. A second electronic component can include a second active region that can include a second portion of the first semiconductor layer. Different processes can be used to form the electronic device. In another embodiment, annealing a workpiece can be performed and the stress of at least one of the semiconductor layers can be changed. In a different embodiment, annealing the workpiece can be performed either before or after the formation of the second semiconductor layer.