The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2002
Filed:
Jun. 02, 2000
William J. Taylor, Jr., Austin, TX (US);
Srikanth B. Samavedam, Austin, TX (US);
Nigel Cave, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A transistor structure includes a retrograde gate structure ( ) that is narrower at the end that interfaces with the gate dielectric ( ) than it is at the opposite end and method for manufacture of such a structure. The retrograde gate structure ( ) is formed by depositing a layer of gate material ( ) that has varying composition in the vertical direction. The differentiation in composition causes varying lateral etch rate characteristics along the vertical direction of the gate structure ( ) such that increased etching of the gate material ( ) occurs near the interface with the gate dielectric layer ( ).