The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 1997
Filed:
Aug. 14, 1995
Applicant:
Inventors:
Danny P Shum, Austin, TX (US);
Ko-Min Chang, Austin, TX (US);
William J Taylor, Jr, Austin, TX (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438264 ; 438308 ; 438289 ;
Abstract
A process for fabricating a non-volatile memory cell (10) in a semiconductor device includes the formation of a doped region (28) in a semiconductor substrate (40) underlying a floating gate electrode (16) and separated therefrom by a tunnel dielectric layer (44). Stress induced failure of the tunnel dielectric layer (44) is avoided by laterally diffusing dopant atoms under the floating gate electrode (16) after completely fabricating both the floating gate electrode (16) and the underlying tunnel dielectric layer (44).