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For the Inventor, By the Inventor

Chandler, AZ, United States of America

William J Ooms

USPTO Granted Patents = 40

Average Co-Inventor Count = 2.7

ph-index = 17

Forward Citations = 962(Granted Patents)


Location History:

  • Hazelcrest, IL (US) (1982)
  • Ft. Lauderdale, FL (US) (1986)
  • Chandler, AZ (US) (1990 - 2003)
  • Prescott, AZ (US) (2002 - 2008)

Company Filing History:

goldMedal39 out of 20,290 
 
Motorola Corporation
 patents
silverMedal1 out of 5,491 
 
Freescale Semiconductor,inc.
 patents

Years Active: 1982-2008

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40 patents (USPTO):Explore Patents
1. 7342276 - Method and apparatus utilizing monocrystalline insulator (2008-03-11),
2. 6569553 - Fuel processor with integrated fuel cell utilizing ceramic technology (2003-05-27),
3. 6563118 - Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same (2003-05-13),
4. 6559471 - Quantum well infrared photodetector and method for fabricating same (2003-05-06),
5. 6555946 - Acoustic wave device and process for forming the same (2003-04-29),
6. 6493497 - Electro-optic structure and process for fabricating same (2002-12-10),
7. 6472278 - Method and apparatus for creating a voltage threshold in a FET (2002-10-29),
8. 6410941 - Reconfigurable systems using hybrid integrated circuits with optical ports (2002-06-25),
9. 6387559 - Direct methanol fuel cell system and method of fabrication (2002-05-14),
10. 6367261 - Thermoelectric power generator and method of generating thermoelectric power in a steam power cycle utilizing latent steam heat (2002-04-09),
11. 6262462 - Enhanced dielectric constant gate insulator (2001-07-17),
12. 6262461 - Method and apparatus for creating a voltage threshold in a FET (2001-07-17),
13. 6248459 - Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon (2001-06-19),
14. 6241821 - Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon (2001-06-05),
15. 6224669 - Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon (2001-05-01),

Title: The Innovative Journey of William J. Ooms

Introduction: William J. Ooms, a talented inventor based in Chandler, Arizona, has made significant contributions to the field of technology through his creative and groundbreaking ideas.

Latest Patents: William J. Ooms holds several patents in various technological domains, showcasing his versatility and ingenuity in inventing new solutions to complex problems.

Career Highlights: Throughout his illustrious career, William J. Ooms has been recognized for his exceptional ability to transform innovative ideas into practical applications. His dedication to pushing the boundaries of technology has led to numerous successful inventions that have made a positive impact on society.

Collaborations: William J. Ooms has collaborated with leading tech companies and research institutions to further develop his inventions and bring them to the market. His collaborative spirit and passion for innovation have been instrumental in his success as an inventor.

Conclusion: William J. Ooms stands as a shining example of a visionary inventor who continues to inspire others with his groundbreaking ideas and relentless pursuit of innovation in the technological landscape.

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