The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Dec. 08, 2000
William J. Ooms, Prescott, AZ (US);
Jeffrey M. Finder, Chandler, AZ (US);
Kurt W. Eisenbeiser, Tempe, AZ (US);
Jerald A. Hallmark, Gilbert, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer ( ) on a silicon wafer ( ). The accommodating buffer layer ( ) is a layer of monocrystalline material spaced apart from the silicon wafer ( ) by an amorphous interface layer ( ) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices ( ) on a monocrystalline silicon substrate.