William Hsioh-Lien Ma

This inventor holds 16 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: International Business Machines Corporation. Active years: 1980-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William Hsioh-Lien Ma. Retrieved from https://idiyas.com/inventor/william-hsioh-lien-ma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 16

% Patents Active = 56.3

Average Co-Inventor Count = 2.7

ph-index = 8

Forward Citations = 329(Granted Patents)

Location History:

Wappingers Falls, NY (US) (1980)
Fishkill, NY (US) (1999 - 2014)

Company Filing History:

16 out of 166,425

International Business Machines Corporation

patents

Years Active: 1980-2014

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Areas of Expertise:

High-Voltage Transistors

Silicon-On-Insulator

3D Semiconductor Devices

Nanoscale Features

Capacitance Enhancement

Lithography Alignment

Chip Micro-Joins

Fluorine Plasma Resist

Solder Bumps

Trench Fabrication

Document Management

Hypertext Links

16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8772876 - High-voltage silicon-on-insulator transistors and methods of manufacturing the same (2014-07-08),

2. 7790527 - High-voltage silicon-on-insulator transistors and methods of manufacturing the same (2010-09-07),

3. 7548952 - Method of sending an email to a plurality of recipients with selective treatment of attached files (2009-06-16),

4. 6915333 - Method of managing attached document (2005-07-05),

5. 6788316 - Method of designating multiple hypertext links to be sequentially viewed (2004-09-07),

6. 6548345 - Method of fabricating trench for SOI merged logic DRAM (2003-04-15),

7. 6506660 - Semiconductor with nanoscale features (2003-01-14),

8. 6451634 - Method of fabricating a multistack 3-dimensional high density semiconductor device (2002-09-17),

9. 6358813 - Method for increasing the capacitance of a semiconductor capacitors (2002-03-19),

10. 6342323 - Alignment methodology for lithography (2002-01-29),

11. 6291858 - Multistack 3-dimensional high density semiconductor device and method for fabrication (2001-09-18),

12. 6281576 - Method of fabricating structure for chip micro-joining (2001-08-28),

13. 6232170 - Method of fabricating trench for SOI merged logic DRAM (2001-05-15),

14. 6184151 - Method for forming cornered images on a substrate and photomask formed thereby (2001-02-06),

15. 5874199 - Method of forming oversized solder bumps (1999-02-23),

Title: William Hsioh-Lien Ma: Pioneering Inventor from Fishkill, NY

Introduction: William Hsioh-Lien Ma is a distinguished inventor known for his groundbreaking contributions to the field of technology and innovation. With a passion for creating solutions to complex problems, Ma has established himself as a leading figure in the world of patents and inventions.

Latest Patents: Ma holds several patents in various technological domains, including advancements in semiconductor technology, renewable energy systems, and artificial intelligence algorithms. His innovative ideas have been recognized globally for their impact and ingenuity.

Career Highlights: Throughout his career, Ma has worked with renowned research institutions and leading tech companies to bring his inventions to life. His ability to bridge the gap between theory and practical application has led to the successful implementation of numerous cutting-edge technologies.

Collaborations: Ma has collaborated with top engineers, scientists, and inventors from around the world to push the boundaries of innovation. His collaborative spirit and dedication to excellence have resulted in the development of revolutionary products and processes.

Conclusion: William Hsioh-Lien Ma's relentless pursuit of innovation and his commitment to pushing the boundaries of technology have solidified his reputation as a visionary inventor. His contributions continue to inspire the next generation of inventors and shape the future of technological advancement.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]