The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Nov. 15, 2000
Steven J. Holmes, Milton, VT (US);
Charles Black, White Plains, NY (US);
David J. Frank, Yorktown Heights, NY (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Mark C. Hakey, Franklin, VT (US);
David V. Horak, Essex Junction, VT (US);
William Hsioh-Lien Ma, Fishkill, NY (US);
Keith R. Milkove, Beacon, NY (US);
Kathryn W. Guarini, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Described is a method of increasing the capacitance of semiconductor capacitors by providing a first solid-state electrode pattern on a semiconductor medium, etching topographic features on said first electrode pattern in a manner effective in increasing the surface area of said first electrode pattern, depositing a dielectric layer upon said electrode pattern that substantially conforms to said topographic features, and depositing a second solid-state electrode pattern upon said dielectric layer and sufficiently insulated from said first solid-state electrode pattern so as to create a capacitance with said first solid-state electrode pattern.