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For the Inventor, By the Inventor

Hilton, NY, United States of America

William G America

This inventor holds 13 USPTO granted patents. Top assignees: Eastman-Kodak Company, International Business Machines Corporation, Clarkson University. Active years: 2001-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William G America. Retrieved from https://idiyas.com/inventor/william-g-america

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 61.5

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 145(Granted Patents)


Location History:

  • Rochester, NY (US) (2002)
  • Hilton, NY (US) (2001 - 2006)
  • Kingston, NY (US) (2002 - 2012)

Company Filing History:

goldMedal6 out of 21,604 
 
Eastman-Kodak Company
 patents
silverMedal5 out of 166,351 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 84 
 
Clarkson University
 patents
4. 1 out of 425 
 
Ferro Corporation
 patents
5. 2 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2001-2012

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13 patents (USPTO):Explore Patents
1. 8106485 - Chemical oxide removal of plasma damaged SiCOH low k dielectrics (2012-01-31),
2. 7404874 - Method and apparatus for treating wafer edge region with toroidal plasma (2008-07-29),
3. 7368393 - Chemical oxide removal of plasma damaged SiCOH low k dielectrics (2008-05-06),
4. 7129159 - Integrated dual damascene RIE process with organic patterning layer (2006-10-31),
5. 7091164 - Slurry for chemical mechanical polishing silicon dioxide (2006-08-15),
6. 6875688 - Method for reactive ion etch processing of a dual damascene structure (2005-04-05),
7. 6627107 - Slurry for chemical mechanical polishing silicon dioxide (2003-09-30),
8. 6544892 - Slurry for chemical mechanical polishing silicon dioxide (2003-04-08),
9. 6491843 - Slurry for chemical mechanical polishing silicon dioxide (2002-12-10),
10. 6489642 - Image sensor having improved spectral response uniformity (2002-12-03),
11. 6468910 - Slurry for chemical mechanical polishing silicon dioxide (2002-10-22),
12. 6403993 - Charge coupled image sensor with u-shaped gates (2002-06-11),
13. 6300160 - Process for charge coupled image sensor with U-shaped gates (2001-10-09),

Title: William G America: Innovator in Semiconductor Technology

Introduction

William G America is a notable inventor based in Hilton, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on innovative methods for improving semiconductor structures and processes.

Latest Patents

Among his latest patents is a method for chemical oxide removal of plasma damaged SiCOH low k dielectrics. This invention presents a structure and method for removing damages from a dual damascene structure after plasma etching. The method utilizes sublimation processes to deposit reactive material onto the damaged regions, achieving controlled removal of the damaged area. Additionally, he has developed a method and apparatus for treating the wafer edge region with toroidal plasma. This invention features a toroidal-shaped plasma cavity designed to treat only the edge region of the wafer, ensuring that the gases exit the cavity without flowing over the wafer's surface.

Career Highlights

William G America has worked with prominent companies such as Eastman Kodak Company and IBM. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

He has collaborated with notable coworkers, including Ramanathan Srinivasan and Suryadevara Vijayakumar Babu. Their combined expertise has fostered innovation in their respective fields.

Conclusion

William G America stands out as a significant figure in the realm of semiconductor innovation. His patents and career achievements reflect his dedication to advancing technology and improving processes within the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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