The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Jul. 11, 2003
Ramanathan Srinivasan, Penn Yan, NY (US);
Suryadevara V. Babu, Potsdam, NY (US);
William G. America, Hilton, NY (US);
Yie-shein Her, Canandaigua, NY (US);
Ramanathan Srinivasan, Penn Yan, NY (US);
Suryadevara V. Babu, Potsdam, NY (US);
William G. America, Hilton, NY (US);
Yie-Shein Her, Canandaigua, NY (US);
Eastman Kodak Company, Rochester, NY (US);
Ferro Corporation, Cleveland, OH (US);
Clarkson University, Potsdam, NY (US);
Abstract
A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.