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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6875688 B1

PDFFull Text
Expired
Date of Patent:
Apr. 05, 2005

Filed:

May. 18, 2004

Method for reactive ion etch processing of a dual damascene structure

Applicants:

William G. America, Kingston, NY (US);

Kaushik A. Kumar, Beacon, NY (US);

Inventors:

William G. America, Kingston, NY (US);

Kaushik A. Kumar, Beacon, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

James J. Cioffi

Cantor Colburn LLP

Primary Examiner:

Matthew Smith

Assistant Examiner:

B V Keshavan

Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract

A method for implementing dual damascene processing includes forming a first hardmask layer over an interlevel dielectric layer, and forming a second hardmask layer over the first hardmask layer. A trench pattern is opened within a third hardmask layer formed over the second hardmask. A first etch process is implemented so as to define a via pattern completely through the second hardmask layer and partially through the first hardmask layer, and a second etch process is implemented to transfer the trench pattern and the via pattern into the interlevel dielectric layer.

Find Patent Forward Citations

America, William. (2005). Method for reactive ion etch processing of a dual damascene structure (U.S. Patent No. 6875688). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6875688

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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