The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Mar. 07, 2008
Applicants:
William G. America, Kingston, NY (US);
Steven H. Johnston, Poughkeepsie, NY (US);
Brian W. Messenger, Newburgh, NY (US);
Inventors:
William G. America, Kingston, NY (US);
Steven H. Johnston, Poughkeepsie, NY (US);
Brian W. Messenger, Newburgh, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A structure and method for removing damages of a dual damascene structure after plasma etching. The method includes the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure includes a dual damascene structure that has been treated by the method.