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For the Inventor, By the Inventor

Thousand Oaks, CA, United States of America

William E Stanchina

This inventor holds 15 USPTO granted patents and 1 EPO patent, primarily in Heterojunction Bipolar Transistors. Top assignees: Hughes Aircraft Company, Hughes Electronics Corporation. Active years: 1991-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William E Stanchina. Retrieved from https://idiyas.com/inventor/william-e-stanchina

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15

% Patents Active = 100.0


Average Co-Inventor Count = 2.8

ph-index = 8

Forward Citations = 142(Granted Patents)


Company Filing History:

goldMedal11 out of 4,197 
 
Hughes Aircraft Company
 patents
silverMedal4 out of 1,334 
 
Hughes Electronics Corporation
 patents

Years Active: 1991-2001

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Areas of Expertise:
Optoelectronic Device
Heterojunction Bipolar Transistor
Analog-to-Digital Converter
Submicron Fabrication
Low Turn-On Voltage
Parasitic Capacitance
Modulation-Doped Heterostructure
Gain-Stable NPN
Self-Aligned Transistor
Multi-Layer Collector
Electrical Junction Device
Integrated Circuit
15 patents (USPTO):Explore Patents
1. 6229189 - Multi-function optoelectronic device structure (2001-05-08),
2. 5920773 - Method for making integrated heterojunction bipolar/high electron (1999-07-06),
3. 5889487 - Flash analog-to-digital converter with latching exclusive or gates (1999-03-30),
4. 5721503 - Flash analog-to-digital converter with latching exclusive or gates (1998-02-24),
5. 5665614 - Method for making fully self-aligned submicron heterojunction bipolar (1997-09-09),
6. 5572049 - Multi-layer collector heterojunction transistor (1996-11-05),
7. 5532486 - Heterojunction diode with low turn-on voltage (1996-07-02),
8. 5468659 - Reduction of base-collector junction parasitic capacitance of (1995-11-21),
9. 5404028 - Electrical junction device with lightly doped buffer region to precisely (1995-04-04),
10. 5365077 - Gain-stable NPN heterojunction bipolar transistor (1994-11-15),
11. 5349201 - NPN heterojunction bipolar transistor including antimonide base formed (1994-09-20),
12. 5322808 - Method of fabricating inverted modulation-doped heterostructure (1994-06-21),
13. 5159423 - Self-aligned, planar heterojunction bipolar transistor (1992-10-27),
14. 5098853 - Self-aligned, planar heterojunction bipolar transistor and method of (1992-03-24),
15. 5049522 - Semiconductive arrangement having dissimilar, laterally spaced layer (1991-09-17),

Title: The Innovative Journey of William E Stanchina

Introduction: William E Stanchina, a talented inventor hailing from Thousand Oaks, CA, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: William E Stanchina holds several patents in various technological domains, showcasing his versatility and creativity in inventing new solutions to complex problems.

Career Highlights: Throughout his illustrious career, William E Stanchina has worked with renowned tech companies, leading research institutions, and universities, where he has spearheaded projects that have pushed the boundaries of innovation.

Collaborations: William E Stanchina has collaborated with top-notch engineers, scientists, and researchers, fostering a culture of innovation and knowledge-sharing that has resulted in remarkable technological advancements.

Conclusion: William E Stanchina's passion for innovation, coupled with his relentless drive to create, has solidified his position as a pioneering inventor in the tech industry, inspiring future generations to pursue their inventive dreams.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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