The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 1994
Filed:
May. 28, 1992
William E Stanchina, Thousand Oaks, CA (US);
Thomas C Hasenberg, Agoura Hills, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A heterojunction bipolar transistor (HBT) (10,30) includes an indium-gallium-arsenide (InGaAs), indium-phosphide (InP) or aluminum-indium-arsenide (AlInAs) collector layer (14) formed over an indium-phosphide (InP) substrate (12). A base layer (16,32) including gallium (Ga), arsenic (As) and antimony (Sb) is formed over the collector layer (14), and an AlInAs or InP emitter layer (18) is formed over the base layer (16,32). The base layer may be ternary gallium-arsenide-antimonide (GaAsSb) doped with beryllium (Be) (16), or a strained-layer-superlattice (SLS) structure (32) including alternating superlattice (32b,32a) layers of undoped gallium-arsenide (GaAs) and P-doped gallium-antimonide (GaSb). The GaSb superlattice layers (32a) are preferably doped with silicon (Si), which is much less diffusive than Be.