Binkom, Belgium

Werner Boullart

This inventor holds 3 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Imec Vzw, Katholieke Universiteit Leuven, Other. Active years: 2002-2012.

USPTO Granted Patents = 3 

% Patents Active = 66.7

 

Average Co-Inventor Count = 5.3

ph-index = 2

Forward Citations = 32(Granted Patents)


Location History:

  • Leuven, BE (2002)
  • Binkom, BE (2009 - 2012)

Company Filing History:

goldMedal2 out of 1,859 
 
Imec Vzw
 patents
silverMedal1 out of 630 
 
Katholieke Universiteit Leuven
 patents
bronzeMedal1 out of 834,350 
Other
 patents
where one patent can have more than one assignee

Years Active: 2002-2012

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3 patents (USPTO):Explore Patents

Title: Werner Boullart: Innovator in Semiconductor Technologies

Introduction

Werner Boullart is a notable inventor based in Binkom, Belgium. He has made significant contributions to the field of semiconductor technologies, holding three patents that showcase his innovative approaches to improving device performance.

Latest Patents

One of his latest patents is titled "Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies." This patent presents a new, effective, and cost-efficient method of introducing Fluorine into Hf-based dielectric gate stacks of planar or multi-gate devices (MuGFET). The method results in a significant improvement in both Negative and Positive Bias Temperature Instabilities (NBTI and PBTI). It utilizes an SF-based metal gate etch chemistry for the introduction of Fluorine, which, after a thermal budget within the standard process flow, achieves excellent F passivation of the interfaces. A key advantage of this method is that it employs the metal gate etch for Fluorine introduction, requiring no extra implantations or treatments. In addition to the substantial BTI improvement, this novel method also enhances Vcontrol and increases drive current on MuGFET devices.

Another significant patent by Boullart is the "Dual damascene patterning method." This method discloses a technique for patterning a dual damascene structure in a semiconductor substrate. The patterning is based on a metal hardmask, which eliminates at least resist poisoning and minimizes low-k damage. This method can be utilized as a full-via-first patterning method or a partial-via-first patterning method.

Career Highlights

Throughout his career, Werner Boullart has worked with esteemed organizations such as Imec and Katholieke Universiteit Leuven, also known as KU Leuven R&D. His work in these institutions has allowed him to contribute to cutting-edge research and development in semiconductor technologies.

Collaborations

He has collaborated with notable coworkers, including Herbert Struyf and Serge Vanhaelemeersch. Their combined expertise has further advanced the innovations in the semiconductor field.

Conclusion

Werner Boullart's contributions to semiconductor technologies through his patents and collaborations highlight his role as an influential inventor. His innovative methods continue to impact the industry positively.

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